PicoAD Sensing Platform
A CMOS-compatible sensing architecture combining custom silicon detector structures with ASIC-based analogue readout electronics for high-fidelity optical signal acquisition. The platform is implemented in standard semiconductor foundry processes and designed as sensor IC technology for weak and fast optical sensing applications.
The sensing interface determines system performance
Most sensing architectures convert optical signals into electrical data and immediately rely on digital reconstruction.
S-SENTIA takes a different approach: we optimise the sensing interface itself, where the optical-to-electrical conversion occurs, to preserve signal information before digitisation. This approach reduces information lost at the earliest stage of acquisition.
Our intellectual property
Multi-Junction Pico-Avalanche Detector
Inventors: G. Iacobucci, P. Valerio, L. Paolozzi · Licensed by: Université de Genève
The PicoAD architecture fundamentally rethinks silicon particle detection by decoupling particle absorption, charge multiplication, and signal collection. This unique approach enables internal gain independent of pixel size, unlocking CMOS-compatible, high-density Si-APD arrays with a 100% fill factor.
PicoAD can serve as a starting wafer for custom CMOS devices or be coupled to a readout ASIC through 3D integration.
Sensor IC architecture
The PicoAD platform integrates three tightly coupled layers.
Silicon detector structure
Custom multi-junction silicon architectures designed to enhance sensitivity and timing response for weak and fast optical signals.
Analogue front-end ASIC
On-chip readout electronics that perform signal amplification and conditioning at pixel level.
Readout and interface electronics
Low-noise extraction and digitisation of preserved analogue signal information.
This architecture enables early preservation of timing, intensity, and event structure directly at the sensing interface.
Silicon validation and MONOLITH research foundation
The PicoAD architecture is grounded in more than a decade of silicon detector research at the University of Geneva, including the MONOLITH ERC Advanced project.
MONOLITH investigated monolithic silicon pixel detectors based on multi-PN junction architectures implemented in standard CMOS and SiGe BiCMOS-compatible processes. These devices demonstrated ultra-fast timing performance and validated the feasibility of advanced gain-engineered silicon structures fabricated using commercial semiconductor foundries.
This research established the physical and architectural foundation for S-SENTIA’s sensing platform, bridging detector physics and ASIC-based system design in a scalable semiconductor framework.
Proven technology, built to scale.
Deep-tech excellence from
Supported by leading innovation ecosystems
Proven technology, built to scale.
Deep-tech excellence from
Supported by leading innovation ecosystems
SENSING SIGNALS AT THE LIMIT OF DETECTION
Capture what others miss
Tell us what you need to detect. If you are exploring next-generation timing, imaging, or particle-detection systems, contact us to discuss what PicoAD could enable.